ON Semiconductor MMBT2222ALT1G
Manufacturer No: MMBT2222ALT1G
Manufacturer: ON Semiconductor
Package: TO-236-3, SC-59, SOT-23-3
Description: TRANS NPN 40V 0.6A SOT23
Product Attributes Support
- Lifecycle Status:ACTIVE (Last Updated: 6 days ago)
- Factory Lead Time:10 Weeks
- Contact Plating:Tin
- Mounting Type:Surface Mount
- Package / Case:TO-236-3, SC-59, SOT-23-3
- Surface Mount:YES
- Number of Pins:3
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:40V
- Number of Elements:1
- hFEMin:100
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Reel (TR)
- Series:Automotive, AEC-Q101
- Published:2006
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Type:General Purpose
- Voltage - Rated DC:40V
- Max Power Dissipation:300mW
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Current Rating:600mA
- Frequency:300MHz
- Time@Peak Reflow Temperature-Max (s):40
- Base Part Number:MMBT2222A
- Pin Count:3
- Element Configuration:Single
- Power Dissipation:225mW
- Transistor Application:SWITCHING
- Gain Bandwidth Product:300MHz
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):40V
- Max Collector Current:600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA 10V
- Current - Collector Cutoff (Max):10nA ICBO
- Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
- Transition Frequency:300MHz
- Max Breakdown Voltage:40V
- Collector Base Voltage (VCBO):75V
- Emitter Base Voltage (VEBO):6V
- Max Junction Temperature (Tj):150°C
- Turn Off Time-Max (toff):285ns
- Height:1.11mm
- Length:2.9mm
- Width:1.3mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
IN STOCK:800021
Increments of:1
- 1+: $0.08151
- 10+: $0.07690
- 100+: $0.07255
- 500+: $0.06844
- 1000+: $0.06457
Subtotal: $ 0.08151
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