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Transistors - FETs, MOSFETs - RFMatching5441
Package / Case -
NI-780S
-
SOT-957A
-
SOT-502B
-
SOT-502A
-
SC-82A, SOT-343
-
2-Flatpack, Fin Leads, Flanged
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2-Flatpack, Fin Leads
-
4-SMD, Flat Leads
-
TO-226-3, TO-92-3 (TO-226AA)
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TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
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PowerSO-10 Exposed Bottom Pad
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TO-236-3, SC-59, SOT-23-3
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NI-1230
-
SOT539A
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SOT539B
-
TO-270AB
-
Die
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H-37248-4
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TO-247-3
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TO-272BB
-
TO-253-4, TO-253AA
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NI-880
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NI-780S-4
-
NI-880S
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PLD-1.5
-
SOT-143R
-
TO-270AA
-
SOT-1258-4
-
6-TSSOP, SC-88, SOT-363
-
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
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TO-243AA
-
M174
-
NI780-4
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SOT-1121B
-
TO-270BA
-
4-SMD, No Lead
-
OM-780-2
-
SOT-979A
-
H-36265-2
-
6-SMD, Flat Lead Exposed Pad
-
NI-1230S
-
SOT467C
-
SOT-1244B
-
M177
-
NI-1230-4S
-
NI-360
-
SOT1275-3
-
6-LDFN Exposed Pad
-
6-VSSOP, SC-88, SOT-363
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NI-400S-2S
-
NI-860C3
-
SOT-1121A
-
SOT-1258-7
-
M243
-
SOT-1244C
-
SOT-1275-1
-
Ceramic
-
NI-1230-4LS2L
-
NI-400
-
H-37248C-4
-
NI-400S
-
SOT-608A
-
SOT1275-1
-
36-QFN Exposed Pad
-
440166
-
440196
-
H-33288-6
-
SOT-1258-3
-
SOT-343F
-
-
-
20-QFN Exposed Pad
-
8-WFDFN Exposed Pad
-
Axial
-
DK
-
SOT-1223-2
-
SOT-608B
-
TO-270BB
-
12-VDFN Exposed Pad
-
440193
-
D4E
-
PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
-
SOT-1120B
-
SOT-1483-1
-
SOT-538A
-
TO-264-3, TO-264AA
-
1206 (3216 Metric)
-
4-SMD
-
440206
-
M244
-
NI-360HF
-
NI-360S
-
NI-780S-4L
-
PLD-1.5W
-
SOIC-8
-
SOT-1110B
-
SOT-1224-2
-
SOT-123A
-
SOT-975C
-
TO-270-2
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TO-272-4
Packaging -
Tape & Reel (TR)
-
Tray
-
Bulk
-
Tube
-
Reel
-
Strip
-
Tape and Reel
-
Cut Tape (CT)
-
Tape & Box (TB)
-
MouseReel
-
Cut Tape
-
Box
-
Blister
-
--
-
2500 per Reel
-
A-405
-
Bag
-
Case - R-1
-
Case - RS-1M
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Digi-Reel®
-
Tape & Reel
-
Wafer
Moisture Sensitivity Level (MSL) -
1 (Unlimited)
-
3 (168 Hours)
-
Not Applicable
-
--
-
2 (1 Year)
Part Status -
Obsolete
-
Active
-
Not For New Designs
-
Discontinued
-
Last Time Buy
-
Unconfirmed
-
NRND
-
LTB
-
Acquired
RoHS Status -
ROHS3 Compliant
-
RoHS Compliant
-
Non-RoHS Compliant
-
Supplier Unconfirmed
-
RoHS non-compliant
-
Yes with exemptions
Transistor Type -
LDMOS
-
LDMOS (Dual), Common Source
-
LDMOS (Dual)
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N-Channel
-
HEMT
-
N-Channel JFET
-
N-Channel Dual Gate
-
pHEMT FET
-
HFET
-
LDMOS FET
-
-
-
E-pHEMT
-
2 N-Channel (Dual) Common Source
-
2 N-Channel (Dual)
-
DMOS FET
-
MESFET
-
GaN HEMT
-
GaN
-
N-Channel GaAs HJ-FET
-
MESFET Dual Gate
-
Silicon Carbide MESFET
-
VDMOS FET
-
2 NPN (Dual)
-
D-pHEMT
-
pHEMT
-
--
-
1 NPN Pre-Biased, 1 NPN
-
4 N-Channel
-
GaAs FET
-
LDMOS (Triple)
-
P-Channel
Frequency -
2.17GHz
-
960MHz
-
2.11GHz~2.17GHz
-
880MHz
-
2GHz
-
800MHz
-
1.99GHz
-
400MHz
-
860MHz
-
2.14GHz
-
175MHz
-
1.88GHz
-
945MHz
-
1.81GHz~1.88GHz
-
500MHz
-
1.93GHz~1.99GHz
-
2.3GHz~2.4GHz
-
2.5GHz~2.7GHz
-
2.69GHz
-
12GHz
-
1.2GHz~1.4GHz
-
108MHz
-
2.45GHz
-
3.55GHz
-
3.4GHz~3.6GHz
-
870MHz
-
230MHz
-
450MHz
-
-
-
1.03GHz~1.09GHz
-
2.4GHz
-
100MHz
-
200MHz
-
6GHz
-
1.805GHz~1.88GHz
-
1.93GHz
-
30MHz
-
1.96GHz
-
520MHz
-
1.03GHz
-
1GHz
-
2.11GHz ~ 2.17GHz
-
1.4GHz
-
1.81GHz
-
40.68MHz
-
920MHz
-
20GHz
-
1.3GHz
-
1.5GHz
-
2.3GHz
-
900MHz
-
2.11GHz~2.2GHz
-
2.5GHz~2.69GHz
-
960MHz~1.215GHz
-
225MHz
-
3.1GHz~3.5GHz
-
65MHz
-
1.93GHz ~ 1.99GHz
-
2.39GHz
-
2.5GHz
-
2.7GHz~3.1GHz
-
1.805GHz ~ 1.88GHz
-
1kHz
-
470MHz
-
920MHz~960MHz
-
940MHz
-
1.03GHz ~ 1.09GHz
-
1.2GHz ~ 1.4GHz
-
2.11GHz
-
220MHz
-
4GHz
-
871.5MHz~891.5MHz
-
2.12GHz
-
2.2GHz
-
2.7GHz
-
3.5GHz
-
960MHz ~ 1.215GHz
-
3GHz
-
2.17 GHz
-
2.62GHz~2.69GHz
-
2.66GHz
-
150MHz
-
2.02GHz
-
81.36MHz
-
1.8GHz ~ 2.2GHz
-
1.8GHz~1.88GHz
-
2.3GHz ~ 2.7GHz
-
2.496GHz ~ 2.69GHz
-
512MHz
-
922.5MHz~957.5MHz
-
0Hz~4GHz
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18GHz
-
2.62GHz
-
2.6GHz~2.7GHz
-
80MHz
-
894MHz
-
0Hz~6GHz
-
1.47GHz~1.51GHz
-
1.84GHz
-
2.16GHz
Voltage - Test -
28V
-
50V
-
28 V
-
30V
-
50 V
-
32V
-
5V
-
26V
-
2V
-
48V
-
30 V
-
12.5V
-
15V
-
10V
-
48 V
-
7.5V
-
13.6V
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32 V
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12V
-
100V
-
26 V
-
36V
-
4V
-
150V
-
6V
-
3 V
-
3V
-
40V
-
8V
-
150 V
-
2 V
-
9V
-
65 V
-
12 V
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4 V
-
4.5V
-
125V
-
125 V
-
3.5V
-
40 V
-
60V
-
65V
-
15 V
-
36 V
-
55 V
-
12.5 V
-
5 V
-
7.2V
-
7.5 V
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2.7V
-
250V
-
300 V
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300V
-
9.6V
-
1.5V
-
10 V
-
10.8V
-
13.6 V
-
29V
-
42V
-
45V
-
6 V
-
7V
-
13.7 V
-
135V
-
2.5 V
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200 V
-
200V
-
250 V
-
3.2V
-
3.6V
-
300 mV
-
31.5V
-
31V
-
380 V
-
380V
-
4.5 V
-
4.8V
-
400 V
-
400V
-
52 V
-
54 V
-
550 mV
-
6.5V
FET Technology -
METAL-OXIDE SEMICONDUCTOR
-
HIGH ELECTRON MOBILITY
-
JUNCTION
-
HETERO-JUNCTION
-
METAL SEMICONDUCTOR
Factory Lead Time -
13 Weeks
-
10 Weeks
-
12 Weeks
-
8 Weeks
-
26 Weeks
-
32 Weeks
-
25 Weeks
-
6 Weeks
-
14 Weeks
-
16 Weeks
-
4 Weeks
-
52 Weeks
-
1 Week
-
20 Weeks
-
7 Weeks
-
11 Weeks
-
27 Weeks
-
24 Weeks
-
17 Weeks
-
2 Weeks
-
22 Weeks
-
29 Weeks
-
15 Weeks
-
23 Weeks
-
28 Weeks
-
3 Weeks
-
18 Weeks
-
30 Weeks
-
31 Weeks
-
38 Weeks
-
40 Weeks
-
42 Weeks
-
5 Weeks
-
53 Weeks
-
9 Weeks
-
[object Object]
Current - Test -
100mA
-
10mA
-
900mA
-
150mA
-
500mA
-
250mA
-
200mA
-
1.3A
-
1.4A
-
1.2A
-
50mA
-
1.6A
-
600mA
-
800mA
-
400mA
-
15mA
-
450mA
-
1A
-
350mA
-
300mA
-
750mA
-
950mA
-
2A
-
550mA
-
1.1A
-
100 mA
-
20mA
-
700mA
-
150 mA
-
1.9A
-
1.5A
-
200 mA
-
1.8A
-
250 mA
-
360mA
-
40mA
-
10 mA
-
850mA
-
60mA
-
1.85A
-
280mA
-
50 mA
-
500 mA
-
1.4 A
-
12mA
-
130mA
-
170mA
-
180mA
-
2.6A
-
60 mA
-
800 mA
-
30mA
-
85mA
-
1.2 A
-
600 mA
-
650mA
-
80mA
-
1 A
-
2.4A
-
25mA
-
30 mA
-
300 mA
-
900 mA
-
5mA
-
1.6 A
-
120mA
-
14mA
-
320mA
-
400 mA
-
1.05A
-
1.1 A
-
1.62A
-
125mA
-
40 mA
-
450 mA
-
55mA
-
610mA
-
90mA
-
1.25A
-
160mA
-
19mA
-
3.4A
-
350 mA
-
70mA
-
950 mA
-
1.3 A
-
1.74A
-
1.9 A
-
140mA
-
700 mA
-
750 mA
-
1.15A
-
110 mA
-
110mA
-
120 mA
-
20 mA
-
240mA
-
720mA
-
860mA
-
1 mA